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LaAlO3

Features:
●Good lattice matching
●Low dielectric constant and low dielectric loss
●The coefficient of thermal expansion is small
●Good chemical stability
●Good thermal stability
Application:
●High temperature superconducting thin film substrate materials
●Low loss microwave applications
●Application of dielectric resonance

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LaAlO3 crystal is the substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetoresistance thin films because of its good lattice matching with a variety of perovskite structure materials.

LaAlO3 single crystal is the most important industrial and large-scale high temperature superconducting thin film substrate single crystal material. LaAlO3 crystal is the substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetoresistance thin films because of its good lattice matching with a variety of perovskite structure materials.

At the same time, lanthanum aluminate crystal has low dielectric constant and good microwave dielectric properties, so it is suitable for low loss microwave amplifier and dielectric resonance applications.

We offers a single crystal substrate with a maximum diameter of 3 inches.

Chemical formula

LaAlO3

Growth method

Czochralski

Hardness

6.5 Mohs

Hardness

6.52g/cm3

Melting point

2080℃

Coefficient of thermal expansion

10x10-6/℃

loss tangent

~3x10-42@300K,~0.6x10-4@77K

Color appearance

Depending on the annealing condition, from Tan to brown

Size

MaxФ76.2mm(3inch

Thickness

0.5mm/1mm

Polishing

Single side or double side

Crystal orientation

< 100 >< 110 >< 111 >

Crystal angle

It can be customized according to the requirements

Surface roughness

Ra≤5Å5μmx5μm

Redirection accuracy

±0.2°

Redirection edge

Special requirements up to 1 ° within

Packing

Class 100 super clean bag, class 1000 super static chamber

Note: Parameters above can be customized as required.



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